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| SMD Type NPN Transistor 2SC3052 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Collector current :IC=0.2A Power dissipation :PC=0.15W +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current power dissipation * Junction temperature Storage temperature * . 0.7 mmx16 cm ceramic substrate 2 Symbol VCBO VCEO VEBO IC Pc Tj Tstg Rating 50 50 6 200 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Noise figure Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob NF fT IC = 100 IC=100 IE=100 Testconditons A,IE=0 A,IB=0 A,IC=0 Min 50 50 6 0.1 0.1 150 50 0.3 1 4 15 180 V V pF dB MHz 800 Typ Max Unit V V V A A VCB=50V,IE=0 VEB=6V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=0.1mA IC=100mA,IB= 10mA IC= 100mA,IB= 10mA VCE=6V, IE=0, f=1MHz VCE=6V,IE=-0.1mA, f=1KHz, RG=2K VCE= 6V, IC= 10mA hFE Classification Marking Rank hFE LE E 150 to 300 LF F 250 to 500 LG G 400 to 800 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn www.kesenes.com 1 |
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